PART |
Description |
Maker |
HF50-12F |
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 纭??灏??????朵?绠?Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc. ADVANCED SEMICONDUCTOR INC
|
ASI10592 HF10-12F |
NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
ASI10593 HF10-12S |
NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
|
HF5-12F |
NPN SILICON RF POWER TRANSISTOR NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0V)(NPN 硅型射频功率晶体Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
|
2SD1007 |
High collector to emitter voltage: VCEO 120V.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|
SBW13009 |
130W Bipolar Junction Transistor, 12A Ic, 400V Vceo, 700V Vces High Voltage Fast-Switching NPN Power Transistor
|
SEMIWELL[SemiWell Semiconductor]
|
STC06IE170HV |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?/a> Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15 Ohm Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17з
|
http:// ST Microelectronics, Inc. STMicroelectronics
|
STC04IE170HV |
Emitter switched bipolar transistor ESBT? 1700V - 4A - 0.17 W Emitter switched bipolar transistor ESBT㈢ 1700V - 4A - 0.17 W
|
STMicroelectronics
|
APT75DL120HJ |
FRED 50-1700V
|
Microsemi
|
APTDF400AK170G |
FRED 50-1700V
|
Microsemi
|
|